IBM announced the first working static random access memory (SRAM) for the 22nm (nanometer) technology node. A nanometer is one one-billionth of a meter or about 80,000 times smaller than the width of a human hair. Worlds first and ever reported smallest working SRAM cell.
The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers. SRAM cell size is a key technology metric in the semiconductor industry, and this work demonstrates IBM and its partners’ continued leadership in cutting-edge process technology.
22 nm is two generations away in chip manufacturing. The next generation is 32 nm, where IBM and its partners are in development with their leading 32 nm high-K metal gate technology.